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Number 3092 Application Note Electrical Characterization of Carbon Nanotube Series Transistors (CNT FETs) with the Model 4200-SCS Semiconductor Characterization System Introduction CNT Carbon nanotubes (CNTs) have been the subject of a lot of Source Drain scientific research in recent years, due not only to their small SiO2 size but to their remarkable electronic and mechanical properties and many potential applications. The problems associated with Si Gate attempting to scale down traditional semiconductor devices have led researchers to look into CNT-based devices, such Figure 1. Back-gated carbon nanotube transistor as carbon nanotube field effect transistors (CNT FETs), as alternatives. Because they are not subject to the same scaling illustrates a back-gated Schottky barrier CNT FET. Two metal problems as traditional semiconductor devices, CNT FETs contacts are located across both ends of the CNT to form the are being studied for a wide variety of applications, including Source and Drain terminals of the FET. The CNT is placed atop logic devices, memory devices, sensors, etc. The research on an oxide that sits above a doped silicon substrate, which forms these devices typically involves determining various electrical the Gate terminal. Connections are made to the three DUT parameters, which may include current-voltage (I-V), pulsed terminals to perform the electrical measurements. I-V, and capacitance (C) measurements. Characterizing the electrical properties of delicate nanoelectronic devices requires Making Electrical Measurements instruments and measurement techniques optimized for low with the Model 4200-SCS power levels and high measurement sensitivity. The Model 4200-SCS is supplied with a test project for making The Model 4200-SCS Semiconductor Characterization System some of the most commonly used CNT FET measurements. offers a variety of advantages for electrical characterization of This project (CNTFET) includes tests for I-V, pulsed I-V, and C-V CNT FETs. This configurable test system can simplify these measurements. The I-V tests are performed using two of the sensitive electrical measurements because it combines multiple Model 4200-SMU Source Measure Units, both with the Model measurement instruments into one integrated system that includes hardware, interactive software, graphics, and analysis capabilities. The system comes with pre-configured tests for performing e